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Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

Published online by Cambridge University Press:  25 February 2011

Weidan Li ,
Anthony P. Taylor  and
Leo J. Schowalter
Weidan Li
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Anthony P. Taylor
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Leo J. Schowalter
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Molecular beam epitaxial (MBE) growth condition of SrF2 directly on Si(111) substrates has been optimized in terms of both X min and the surface morphology. Lattice distortion measurements were carried out with ion channeling along off-normal channeling directions in the strained layers grown at the optimal condition. The relationship of residual strain vs. film thickness for SrF2 on Si(111) was provided by the first time. The experimental data demonstrated a special thickness in this relation, at which the derivative of strain vs. film thickness changes its sign. This unique behavior was understood as the result of competition between the large lattice mismatch and the large thermal mismatch between SrF2 and Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 433
Copyright
Copyright © Materials Research Society 1992

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References

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