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Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

Published online by Cambridge University Press:  25 February 2011

Tri-Rung Yew  and
Rafael Reif
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing–Hua University, Hsinchu, Taiwan, ROC
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of technology, Massachusetts, USA
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Abstract

This paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 401
Copyright
Copyright © Materials Research Society 1991

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References

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