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Structural, Magnetic and Dielectric Properties of Magnetoelectric TbMn1-xCuxO3

Published online by Cambridge University Press:  31 January 2011

Shishir Ray ,
Larry Buroker ,
Mark S Williamsen ,
Ying Zou ,
Somaditya Sen  and
Prasenjit Guptasarma
Shishir Ray
Affiliation:
skray@uwm.edu, University of Wisconsin Milwaukee, Physics, 1900 E Kenwood Blvd, Milwaukee, Wisconsin, 53211, United States, 414-412-0866
Larry Buroker
Affiliation:
lburoker@uwm.edu, University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Mark S Williamsen
Affiliation:
msw@uwm.edu, University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Ying Zou
Affiliation:
zou@uwm.edu, University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Somaditya Sen
Affiliation:
sens@uwm.edu, University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Prasenjit Guptasarma
Affiliation:
pg@uwm.edu, University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
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Abstract

TbMnO3 is a multiferroic magnetoelectric material known to simultaneously exhibit antiferromagnetism below 40K and ferroelectricity below 28K in the same crystalline phase [1]. Following interesting results of Cu substitution in LaMn1-yCuyO3 [2, 3], we report a study of TbMn1-x CuxO3 (0 < x < 0.15). We describe here our results of crystal structure refinement, together with measurements of magnetic and dielectric properties in the temperature range 2 - 320 K, and magnetic field 0 - 9 T. We find no major changes in structure or symmetry upon substitution of Cu up to x = 0.15 in TbMn1-x CuxO3. Unlike LaMn1-yCuyO3, which exhibits ferromagnetism with very low values of y, we observe antiferromagnetism at x = 0.15. Our study of dielectric properties as a function of temperature suggests increased lossy behavior upon substitution of Cu at the Mn site. In our temperature dependent studies of tan δ at 1 kHz, we observe a well-defined step-like feature near 120K in both pure and substituted samples, possibly ascribable to a change in carrier mobility, or a dielectric-relaxation process mediated by ordered oxygen vacancies [4, 5], which we will continue to study.

Keywords

magnetic propertieselectronic materialTb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-28
Copyright
Copyright © Materials Research Society 2010

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