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Submicron Scale Interface Roughness in Quantum Wells Observed by High-Resolution Cathodoluminescence Microscopy

Published online by Cambridge University Press:  25 February 2011

Tom Murashita ,
Kazumi Wada ,
Kiyoshi Kanisawa  and
Naohisa Inoue
Tom Murashita
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa, 243–01 JAPAN
Kazumi Wada
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa, 243–01 JAPAN
Kiyoshi Kanisawa
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa, 243–01 JAPAN
Naohisa Inoue
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa, 243–01 JAPAN
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Abstract

A single quantum well (SQW) is grown at a high substrate temperature and low growth rate (HTLR growth) in order to reduce interface roughness. The lateral well thickness variation in the SQW is characterized by the cathodolumincscence microscopy. It is clarified that HTLR growth can be applied to make a smooth interface for advanced devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 251
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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