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Substituted Indolo[3,2-b]Carbazoles: A New Class of Stable, High Mobility Organic Semiconductors for Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Yuning Li ,
Yiliang Wu  and
Beng Ong
Beng Ong
Affiliation:
Materials Design & Integration Laboratory Xerox Research Centre of Canada Mississauga, Ontario, Canada L5K 2L1 e-mail:Beng.Ong@xrcc.xeroxlabs.com
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Abstract

Properly functionalized indolo[3,2-b]carbazoles represent a new class of stable, high-mobility organic semiconductors for organic thin-film transistor applications. Both 5,11-disubstituted and peripherally substituted indolo[3,2-b]carbazoles with proper substituents self-organized into highly crystalline terrace-layered structures under suitable processing conditions. Organic TFTs using channel semiconductors of this nature exhibited excellent field-effect transistor properties, with mobility to 0.14 cm2 V-1 s-1 and current on/off ratio to 107. By virtue of their relatively low HOMO levels and large band gaps, this class of semiconductors also displayed excellent environmental stability under ambient conditions, an appealing characteristic for organic TFT applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I2.9
Copyright
Copyright © Materials Research Society 2005

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References

1(a) Katz, H. E., Bao, Z., Gilat, S. L., Acc. Chem. Res. 34, 359 (2001).Google Scholar
(b) Dimitrakopoulos, C. D., Mascaro, D. J., Adv. Mater. 14, 99 (2002).Google Scholar
2(a) Gundlach, D. J., Lin, Y.Y., Jackson, T. N., Nelson, S. F., Schlom, D. G., IEEE Electron Device Lett. 18, 87 (1997).Google Scholar
(b) Kelly, T. W., Boardman, L. D., Dunbar, T. D., Muyres, D. V., Pellerite, M. J., Smith, T. P., J. Phys. Chem. B 107, 5877 (2003).Google Scholar
3(a) Garnier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S., Alnot, P., J. Am. Chem. Soc. 115, 8716 (1993).Google Scholar
(b) Katz, H. E., Torsi, L., Dodabalapur, A., Chem. Mater. 7, 2235 (1995).Google Scholar
(c) Bao, Z., Dodabalapur, A., Lovinger, A. J., Appl. Phys. Lett. 69, 4108 (1996).Google Scholar
(d) Sirringhaus, H., Brown, P. J., Friend, R. H., Nielen, M. M., Bechgaard, K., Langeveld-Voss, B. M. W., Spiering, A. J. H., Janssen, R. A. J., Meijer, E. W., Herwig, P., Leeuw, D. M. de, Nature, 401, 685 (1999).Google Scholar
(e) Ong, B. S., Wu, Y., Liu, P., Gardner, S., J. Am. Chem. Soc. 126, 3378 (2004).Google Scholar
4(a) Herwig, P. T., Müllen, K., Adv. Mater. 11, 480 (1999).Google Scholar
(b) Afzali, A., Dimitrakopoulos, C. D., Breen, T. L., J. Am. Chem. Soc. 124, 8812 (2002).Google Scholar
5 Meng, H., Bao, Z., Lovinger, A. J., Wang, B., Mujsce, A. M., J. Am. Chem. Soc. 123, 9214 (2001).Google Scholar
6 Wu, Y., Li, Y., Gardner, S., Ong, B. S., J. Am. Chem. Soc. 127, 614 (2005).Google Scholar
7 Li, Y., Wu, Y., Gardner, S., Ong, B. S., Adv. Mater. 17, 849 (2005).Google Scholar