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Thermal and Electromigration Effects on the Surface and Aluminum/Aluminum Oxide Interface of Aluminum Metallizations

Published online by Cambridge University Press:  21 February 2011

George O. Ramseyer ,
Joseph V. Beasock ,
William K. Sylla  and
Lois H. Walsh
George O. Ramseyer
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
Joseph V. Beasock
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
William K. Sylla
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
Lois H. Walsh
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
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Abstract

Thermal and electromigration effects on the thicknesses of aluminum oxide at the aluminum-1% silicon/thermal silicon dioxide interface were quantitatively determined by AES. Void sites corresponded with thinner aluminum oxide thicknesses at this interface. Changes in surface topography and grain structure were quantitatively determined for thermally annealed aluminum-1% silicon metallizations by AFM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

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