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Thin Film Reactions on Alloy Semiconductor Substrates

Published online by Cambridge University Press:  25 February 2011

D. A. Olson ,
K. M. Yu ,
J. Washburn  and
T. Sands
D. A. Olson
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
J. Washburn
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701.
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Abstract

The interactions between Pt thin films and In53Ga47As have been studied. An important result is that the reaction kinetics deviate from those of other metal/compound semiconductor reactions. The kinetics can be divided into two stages, where the reaction slows by a factor of 5 after ~60 minutes of annealing at 400°C. In addition, Auger depth-profiling indicates that an In-rich layer develops at the reacted layer/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 713
Copyright
Copyright © Materials Research Society 1991

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References

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