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Three-Dimensional Integrated Circuit Technology

Published online by Cambridge University Press:  22 February 2011

Dimitri A. Antoniadis
Dimitri A. Antoniadis*
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Within the last five years considerable research has focused on techniques to create “device-worthy” crystalline silicon films on insulators. Though several applications for such techniques have been proposed, none is more exciting than the prospect of “3-D Integration”, which has come to mean any IC technology that would yield more than one plane of active devices. This paper reviews the progress to date in this field by critically examining the merits and dismerits of the several silicon film preparation techniques, the several proposed 3-D device structures, and some possible applications of 3-D integration in electronic systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 587
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Gibbons, J. F. and Lee, K. F., IEEE Electron Dev. Lett., EDL–1, 117 (1980).Google Scholar
2.Colinge, J. P. and Demoulin, E., IEEE Electron Dev. Lett., EDL–2, 250 (1981).Google Scholar
3.Goeloe, G. T., Maby, E. W., Silversmith, D. J., Mountain, R. W., and Antoniadis, D. A., 1981 IEDM Tech. Dig. pp. 554–556.Google Scholar
4.Romano, R., 39th Device Research Conference,U. of Vermont, Vermont,1983.Google Scholar
5.Robinson, A. L., Antoniadis, D. A., and Maby, E. W., 1983 IEDM Tech. Dig. pp. 530–533.Google Scholar
6.Kawamura, S., Sasaki, N., Iwai, T., Nakano, M., and Takagi, M., IEEE Electron Dev. Lett., EDL–4, 366 (1983).Google Scholar
7.Akiyama, S., Ogawa, S., Yoneda, M., Yoshimi, N. and Termi, Y., 1983 IEDM Tech. Dig. pp. 352–355.Google Scholar
8.Maby, E. W. and Antoniadis, D. A., MRS 1984 Spring Meeting, Albuquerque, NM.Google Scholar
9.Gibbons, J. F., Lee, K. F., Wu, F. C., and Eggemont, G. E. J., IEEE Electron Dev. Lett., EDL–3, 191 (1982).Google Scholar
10.Gibbons, J. F. and Lee, K. F., 1982 IEDM Tech. Dig., pp. 111–114.Google Scholar
11.Jolly, R. D., Kamins, T. I., and McCharles, R. H., IEEE Electron Dev. Lett., EDL–4, 8 (1983).Google Scholar
12.Gibbons, J. F., private communication.Google Scholar
13.Shichijo, H., Mahli, S. D. S., Chatterjee, P. K., Shah, R. R., Douglas, M. A., and Lam, H. W., 1983 IEDM Tech. Dig., pp. 202–205.Google Scholar
14.Kawamura, S., Sakurai, J., Nakano, M., and Takagi, M., Appl. Phys. Lett, 40, 394 (1982).Google Scholar
15.Colinge, J. P., Demoulin, E., Bensahel, D., and Auvert, G., Appl. Phys. Lett., 41, 346 (1982).Google Scholar
16.Kamins, T. I., 1982 IEDM Tech. Dig., pp. 420–423.Google Scholar