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Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride

Published online by Cambridge University Press:  10 February 2011

B. E. Foutz ,
S. K. O'leary ,
M. S. Shur ,
L. F. Eastman  and
U. V. Bhapkar
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
S. K. O'leary
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
U. V. Bhapkar
Affiliation:
Naval Surface Warfare Center, Code T44, Building 1470, Dahlgren, Virginia 22448
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Abstract

Using an ensemble Monte Carlo approach, ballistic transport and velocity overshoot effects are examined in InN and compared with those in GaN and GaAs. It is found that the peak overshoot velocity is in general greater than both GaN and GaAs. Furthermore, the velocity overshoot in InN occurs over distances in excess of 0.4 μm, which is comparable to GaAs but is significantly longer than the overshoot in GaN. These strong overshoot effects, combined with a high peak drift velocity, large low-field mobility, and large saturation drift velocity, should allow InN based field effect transistors to outperform their GaN and GaAs based counterparts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 821
Copyright
Copyright © Materials Research Society 1998

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