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Waferstepper Alignment for MEMS Applications using Diffraction Gratings

Published online by Cambridge University Press:  01 February 2011

H. W. van Zeijl ,
K. Simon ,
J. Slabbekoorn ,
W. v. Buel  and
C. Q. Gui
H. W. van Zeijl
Affiliation:
Delft Institute of Microelectronics and Submicron technologies, Feldmannweg 17, 2628 CT delft, The Netherlands
K. Simon
Affiliation:
ASM lithography, De Run 1110, 5503 LA Veldhoven, the Netherlands
J. Slabbekoorn
Affiliation:
Delft Institute of Microelectronics and Submicron technologies, Feldmannweg 17, 2628 CT delft, The Netherlands
W. v. Buel
Affiliation:
ASM lithography, De Run 1110, 5503 LA Veldhoven, the Netherlands
C. Q. Gui
Affiliation:
ASM lithography, De Run 1110, 5503 LA Veldhoven, the Netherlands
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Abstract

MEMS manufacturing in general and the litho step in particular could benefit tremendously from an enhanced focus range of waferstepper alignment systems. This would help the MEMS community to cope with large substrate topography or extreme thick resist films. In this study the performance range over which of the alignment system of an ASML PAS5000/50 system operates has been investigated.

A test device that requires bulk micro machining was designed and processed. The required front to backwafer alignment (FTBA) was performed on alignment markers in cavities etched through a 100mm wafer. On the test device the FTBA overlay was measured electrically as well as optically using the metrology capability of the stepper alignment system. The results obtained demonstrate the capabilities of an existing alignment system to deal with high topographies. The overlay errors observed were dominated by the bulk micro machining processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 729: Symposium U – MEMS and BioMEMS , 2002 , U5.8
Copyright
Copyright © Materials Research Society 2002

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References

Refences

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