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Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

Published online by Cambridge University Press:  01 February 2011

A. Nuñez Rodriguez ,
M.T.S. Nair  and
P.K. Nair
A. Nuñez Rodriguez
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: pkn@cie.unam.mx
M.T.S. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: pkn@cie.unam.mx
P.K. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos 62580, MEXICO. E-mail: pkn@cie.unam.mx
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Abstract

Ag2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V5.14
Copyright
Copyright © Materials Research Society 2002

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