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Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

Published online by Cambridge University Press:  31 January 2011

Nola Li ,
Shen-Jie Wang ,
William E. Fenwick ,
Andrew Melton ,
Chung-Lung Huang ,
Zhe Chuan Feng ,
Christopher Summers ,
Muhammad Jamil  and
Ian Ferguson
Nola Li
Affiliation:
holanola@gatech.edu, Georgia Institute of Technology, Atlanta, United States
Shen-Jie Wang
Affiliation:
sjwang118@googlemail.com, Georgia Institute of Technology, Atlanta, United States
William E. Fenwick
Affiliation:
fenwick@ece.gatech.edu, Georgia Institute of Technology, Atlanta, United States
Andrew Melton
Affiliation:
amelton@ece.gatech.edu, Georgia Institute of Technology, Atlanta, United States
Chung-Lung Huang
Affiliation:
a@a.edu, National Taiwan University, Taipei, United States
Zhe Chuan Feng
Affiliation:
fengzc@cc.ee.ntu.edu.tw, National Taiwan University, Taipei, United States
Christopher Summers
Affiliation:
chris.summers@mse.gatech.edu, Georgia Institute of Technology, Atlanta, United States
Muhammad Jamil
Affiliation:
jamil@ece.gatech.edu, Georgia Institute of Technology, Atlanta, United States
Ian Ferguson
Affiliation:
ianf@uncc.edu, University of North Carolina Charlotte, Charlotte, United States
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Abstract

GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

Keywords

GaNmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H06-02
Copyright
Copyright © Materials Research Society 2010

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References

1 Kobayashi, A., Ohta, J., Fujioka, H., J. Appl. Phys. 99, 123513 (2006).10.1063/1.2206883Google Scholar
2 Namkoong, G., Burnham, S., Lee, K., Trybus, E., Doolittle, W. A., Losurdo, M., Capezzuto, P., Bruno, G., Nemeth, B., Nause, J., Appl. Phys. Lett. 87, 184104 (2005).10.1063/1.2120912Google Scholar
3 Li, N., Wang, S. J., Park, E. H., Lien, S. C., Feng, Z. C., Valencia, A., Nause, J., and Ferguson, I., J. Appl. Phys. 102, 106105 (2007).Google Scholar
4 Hamdani, F., , M.Y., Smith, D., Tang, H., Kim, W., Salvador, A., Botchkarev, A.E., Gibson, J.M., Polyakov, A.Y., Skowronski, M., and Morkoc, H., J. Appl. Phys. 83, 2 (1998).10.1063/1.366786Google Scholar
5 Rogers, D.J., Teherani, F.H., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M.R., Peres, M., Neves, A., McGrouther, D., Chapman, J.N., Razeghi, M., Appl. Phys. Lett. 91, 071120 (2007).10.1063/1.2770655Google Scholar
6 Li, N., Park, E. H., Huang, Y., Wang, S. J., Valencia, A., Nemeth, B., Nause, J., and I. Ferguson Proc. SPIE 6337, 63370Z (2006).10.1117/12.696645Google Scholar
7 Park, E. H., Park, J. S., and Yoo, T. K., J. Cryst. Growth 272, 426 (2004).10.1016/j.jcrysgro.2004.08.081Google Scholar
8 Lee, R.T. and Stringfellow, G.B., J. Elect. Mater. 28, 963 (1999).10.1007/s11664-999-0205-9Google Scholar
9 Popovici, W.K., Botchkarev, A., Tang, H., Morkoc, H., and Solomon, J., Appl. Phys. Lett. 71, 23 (1997).10.1063/1.120343Google Scholar
10 Suzuki, C.H., Goto, H., Minegishi, T., Setiawan, A., Ko, H. J., Cho, M. W., and Yao, T., Curr. Appl. Phys. 4, 643 (2004).10.1016/j.cap.2004.01.039Google Scholar
11 Nakamura, S., J. Cryst. Growth 145, 911 (1994).10.1016/0022-0248(94)91163-0Google Scholar
12 Jakschik, S., Thin Solid Films 425, 216–220 (2003).10.1016/S0040-6090(02)01262-2Google Scholar
13 Zhang, L, Jiang, H C, Liu, C, Dong, J W, and Chow, P, Journal of Physics D: Applied Physics 40, 3707–3713 (2007).10.1088/0022-3727/40/12/025Google Scholar
14 Nepal, N., Nakarmi, M.L., Jang, H.U., Lin, J.Y., Jiang, H.X., Appl. Phys. Lett. 89, 192111 (2006).10.1063/1.2387869Google Scholar
15 Wang, S.J., Li, N., Park, E.H., Lien, S.C., Feng, Z.C., Valencia, A., Nause, J., Ferguson, I., J. Appl. Phys. 102, 106105 (2007).10.1063/1.2817482Google Scholar
16 Neugebauer, J. and Walle, C.G. Van de, Phys. Rev. B 50, 8067 (1994).10.1103/PhysRevB.50.8067Google Scholar