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Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

Published online by Cambridge University Press:  25 February 2011

S. Mantl ,
H. L. Bay  and
Ch. Dieker
S. Mantl
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Joilich, POB 1913, W-5170 JAlich, Germany
H. L. Bay
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Joilich, POB 1913, W-5170 JAlich, Germany
Ch. Dieker
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Joilich, POB 1913, W-5170 JAlich, Germany
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Abstract

A new method for the growth of epitaxial compound thin films, termed allotaxy, is proposed and the fabrication of the silicide heterostructure Si/CoSi2/Si(100) Is demonstrated. Allotaxy is a two. step process. In our example, Si is deposited on a heated Si substrate and then Co is coevaporated at varying rates such that a peaked Co-depth profile in Si is generated. At appropriate deposition conditions CoSi2 precipitates embedded in single crystalline Si are formed. These precipitates coarsen and coalesce into a buried, uniform, epitaxial CoSi2 layer during the second processing step, a high temperature anneal. Allotaxy should allow not only the epitaxial growth of silicides but also that of other binary, precipitates forming systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 221
Copyright
Copyright © Materials Research Society 1992

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References

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