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Amorphous Silicon Thin-Film Transistors with a Hot-Wire Active-Layer Deposited at High Growth Rate

Published online by Cambridge University Press:  15 February 2011

V. Chu ,
J. Jarego ,
H. Silva ,
T. Silva ,
M. Boucinha ,
P. Brogueira  and
J. P. Conde
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal
J. Jarego
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal
H. Silva
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal
T. Silva
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal
M. Boucinha
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal
P. Brogueira
Affiliation:
Dept. of Physics, Instituto Superior Técnico, Lisbon, Portugal
J. P. Conde
Affiliation:
Dept. of Materials Engineering, Instituto Superior Técnico, Lisbon, Portugal
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Abstract

High-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 Å/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 Å/s. The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT. The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level. The effect of a bias stress on the TFT transfer curve is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 905
Copyright
Copyright © Materials Research Society 1997

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References

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