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An Investigation Into the Preparation, Properties, and Processing of SiC/AIN and Si3N4/AIN Solid Solutions from Organometallic Precursors.

Published online by Cambridge University Press:  25 February 2011

Leonard V. Interrante ,
Corinna L. Czekaj ,
Micheal L.J. Hackney ,
Gary A. Sigel ,
Paul J. Schields  and
Glen A. Slack
Leonard V. Interrante
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180.
Corinna L. Czekaj
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180.
Micheal L.J. Hackney
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180.
Gary A. Sigel
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180.
Paul J. Schields
Affiliation:
General Electric Research and Development Center, P.O. Box 8, Schenectady, NY 12301.
Glen A. Slack
Affiliation:
General Electric Research and Development Center, P.O. Box 8, Schenectady, NY 12301.
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Abstract

Solid solutions of SiC and AIN have been prepared by the co-pyrolysis of polysilanes and organoaluminum amides. In the presence of ammonia. Si3N4 and AIN are formed. These materials are fully characterized by TEM, SAD, SEM, XRPD, and elemental analyses. The influence of reaction conditions, as well as precursor properties and reactivity, on the composition and morphology of these materials is addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 465
Copyright
Copyright © Materials Research Society 1988

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References

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