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Analysis of the Interfacial Reaction Between Sn-3.5Ag and Electroplating Interlayers

Published online by Cambridge University Press:  01 February 2011

S.M. Yang ,
Y.Y. Chang  and
Weite Wu
S.M. Yang
Affiliation:
Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC
Y.Y. Chang
Affiliation:
Surftech Co., Taichung 407, Taiwan, ROC
Weite Wu
Affiliation:
Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC
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Abstract

At present, Pb-free process is imperative in the electronic packaging industry. Many reports focus on Pb-free solder to improve the solderability, it seems not obtain wettability as good as SnPb solder. In this study, an alloy interlayer with different content was deposited on Cu to balance wettability and diffusion barrier in the interface of joint by electroplating process. There are three types of interlayers including Cu, Ni, and SnNi alloy. The interlayer may react with Sn-3.5Ag solder during reflow process. Sn-Ni alloy plating layer is selected to improve wettability and provide diffusion barrier at the same time in soldering process. For interfacial microstructure examination, morphology characterization can be obtained by using scanning electron microscope (SEM) and energy-dispersive x-ray analysis (EDX). The structure of IMC is identified by x-ray diffraction (XRD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.29
Copyright
Copyright © Materials Research Society 2005

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References

1. Ho, C.E., Chen, Y.M., and Kao, C.R., J. Electron. Mater. 28, 1231. (1999).Google Scholar
2. Alam, M.O., Chan, Y.C., and Hung, K.C., J. Electron. Mater. 31, 1117. (2002).Google Scholar
3. Zeng, K., and Tu, K.N., Mater. Sci. Eng. R. 38, 55. (2002).Google Scholar
4. Winterbottom, W.L., JOM 45, 20. (1993).Google Scholar
5. Yoon, J.W., Lee, C.B., and Jung, S.B., J. Electron. Mater. 32, 1195. (2003).Google Scholar
6. McCormack, M., and Jin, S., JOM 45, 36. (1993).Google Scholar
7. Glazer, J., J. Electron. Mater. 23, 693. (1994).Google Scholar
8. Kang, S.K., and Sarkhel, A.K., J. Electron. Mater. 23, 701. (1994).Google Scholar
9. Melton, C., JOM 45, 33. (1993).Google Scholar
10. Tu, P.L., Chan, Y.C., Hung, K.C., and Lai, J.K.L., Scripta Mater. 2, 317. (2001).Google Scholar
11. Zuruzi, A.S., Lahiri, S.K., Burman, P., and Siow, K.S., J. Electron. Mater. 30, 997. (2001).Google Scholar
12. Ting, C.H., Paunvovic, M., Rai, P.L., and Chiu, G., J. Electron. Mater. 136, 462. (1989).Google Scholar
13. Kim, P.G., Jang, J.W., Lee, T.Y., and Tu, K.N., J. Appl. Phys. 86, 6746. (1999).Google Scholar
14. Tu, K.N., and Zeng, K., Mater. Sci. Eng. R, 34, 1. (2001).Google Scholar
15. Lay, D.E., Plating Surf. Finish., 26 (1988).Google Scholar
16. Sharif, A., and Chan, Y.C., Mater. Sci. Eng. B, 106, 126. (2004).Google Scholar
17. Hsu, H.F., and Chen, S.W., Acta Metall, 52, 2541. (2004)Google Scholar
18. Deng, X., Piotrowski, G., Williams, J.J., and Chawla, N., J. Electron. Mater. 32, 1403. (2003).Google Scholar
19. Jeong, S.W., Kim, J.H., and Lee, H.M., J. Electron. Mater. 33, 1530. (2004).Google Scholar
20. He, M., Lau, W.H., Qi, G., and Chen, Z., Thin Solid Films., 462-463, 376. (2004)Google Scholar