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Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

Published online by Cambridge University Press:  01 February 2011

Qianghua Wang ,
Jianzeng Xu ,
Changhe Huang  and
Gregory W Auner
Qianghua Wang
Affiliation:
qhuawang@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, 5050 Anthony Wayne Drive #3158, Detroit, Michigan, 48202, United States, (313)-577-2031, (313)-577-1101
Jianzeng Xu
Affiliation:
jianzeng@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
Changhe Huang
Affiliation:
chhuang@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
Gregory W Auner
Affiliation:
gauner@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
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Abstract

This paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

Keywords

nitridemicroelectro-mechanical (MEMS)piezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-01
Copyright
Copyright © Materials Research Society 2006

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References

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