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Assessment of Free Electron to Free Hole Ratios in a-Si:H By Ambipolar Diffusion and Photoconductivity Measurements

Published online by Cambridge University Press:  21 February 2011

Patrice Pipoz ,
Evelyne Sauvain ,
Jacques Hubin  and
Arvind Shah
Patrice Pipoz
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Evelyne Sauvain
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Jacques Hubin
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Arvind Shah
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
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Abstract

The authors report on systematic photoconductivity σph and ambipolar diffusion length Lamb measurements carried out on a series of lightly p- and n-doped samples and monitored throughout the entire light-induced degradation process. The results are interpreted based on a transport model involving free carriers (nf and pf), localized charge on bandtails, as well as dangling bond and dopant charges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 777
Copyright
Copyright © Materials Research Society 1992

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References

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