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Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces

Published online by Cambridge University Press:  31 January 2011

Theodosia Gougousi ,
John W. Lacis ,
Justin C Hackley  and
John Demaree
Theodosia Gougousi
Affiliation:
gougousi@umbc.edu, UMBC, Physics, Baltimore, Maryland, United States
John W. Lacis
Affiliation:
jlacis1@umbc.edu, UMBC, Physics, Baltimore, Maryland, United States
Justin C Hackley
Affiliation:
jhackley@lps.umd.edu, UMBC, Physics, Baltimore, Maryland, United States
John Demaree
Affiliation:
jdemaree@arl.army.mil, Army Research Laboratory, Weapons & Materials Research Directorate, Aberdeen Proving Ground, Maryland, United States
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Abstract

Atomic Layer Deposition is used to deposit HfO2 and TiO2 films on GaAs (100) native oxides and etched surfaces. For the deposition of HfO2 films two different but similar ALD chemistries are used: i) tetrakis dimethyl amido hafnium (TDMAHf) and H2O at 275°C and ii) tetrakis ethylmethyl amido hafnium (TEMAHf) and H2O at 250°C. TiO2 films are deposited from tetrakis dimethyl amido titanium (TDMATi) and H2O at 200°C. Rutherford Back Scattering shows linear film growth for all processes. The film/substrate interface is examined using x-ray Photoelectron Spectroscopy and confirms the presence of an “interfacial cleaning” mechanism.

Keywords

atomic layer depositiondielectricx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C10-03
Copyright
Copyright © Materials Research Society 2009

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