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Autostoichiometric Mocvd Of Multicomponent Thin Films LiTaO3, LiNbO3 and SrxBa1-xNbO6

Published online by Cambridge University Press:  10 February 2011

R. Zhang  and
R. Xu
R. Zhang
Affiliation:
Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112
R. Xu
Affiliation:
Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112
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Abstract

A novel stoichiometric vapor deposition process, Autostoichiometric MOCVD, was developed in this study to prepare stoichiometric thin films. Heterometallic alkoxides were used as single precursor for two different metal components in Autostoichiometric MOCVD. The molecular ratios of the metals were conserved through the precursor evaporation and the deposition reactions based on the chemical nature of precursors and the deposition reaction mechanisms. A non-stoichiometric factor K was defined to study the evaporation process of precursors. A precursor evaluation method using the K factor and the thermal decomposition analysis was introduced to quantitatively analyze the stoichiometric evaporation characteristic of a heterometallic alkoxide precursor. Single phase LiTaO3, LiNbO3, SrNb2O6 and BaNb2O6 films were successfully obtained using precursor LiTa(n-OBut)6 or LiTa(i-OBut)6, LiNb(n-OBut)6, SrNb2(n-OBut)12 and BaNb2(n-OBut)12, respectively. Solid solution Sr1-x.BaxNb2O6(SBN) films were also successfully obtained by a two-step Autostoichiometric MOCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 177
Copyright
Copyright © Materials Research Society 2000

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