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Backside Storage Non-Volatile Memories: Ultra-Thin Silicon Layer on a Complex Thin Film Structure

Published online by Cambridge University Press:  01 February 2011

H. Silva  and
S. Tiwari
H. Silva
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853, USA
S. Tiwari
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853, USA
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Abstract

Backside storage memories present an alternative to the conventional front-floating gate geometries by storing charge in defects on the back of a thin depleted silicon channel. This paper focuses on the fabrication of these devices using a modified Smart-Cut™ substrate preparation process followed by standard CMOS processing. The substrate is a complex silicon-on-insulator (SOI) substrate where instead of the buried oxide alone a charge trapping multi-layer stack of oxide-nitride-oxide (ONO) is used as the buried insulator. We demonstrate here the operation of these device structures at ultra-short length scales and summarize the characteristics of their operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D1.4
Copyright
Copyright © Materials Research Society 2005

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References

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