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Barrier Height Control and X-Ray Diffraction Study of Metal on Si1−Gex/Si Grown by Very Low Pressure CVD

Published online by Cambridge University Press:  15 February 2011

Z. Q. Shiâ ,
L. He  and
Y. Zheng
Z. Q. Shiâ
Affiliation:
Hughes STX Corporation, Greenbelt, MD 20770
L. He
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
Y. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, PRC
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Abstract

The potential application of epitaxial Si1−xGex, on Si in electronic and optoelectronic devices has led to an increased study of metal - Si1−xGex interaction and barrier height control technique. In this paper, we report the epitaxial growth of Si1−xGex on Si and the Schottky barrier formation processing. The Si1−xGex (x=0.17 and 0.20) layers were grown by rapid radiant heating, very low pressure chemical vapor deposition (VLPCVD). The crystal structure and epitaxial nature of the Si1−xGex, layers were studied by X-Ray diffraction. The value of full width at half maximum (FWHM) was found to be 0.34° for the as grown Si1−xGex (400) peak. The metal-Si1−xGex/Si Schottky diodes were formed by depositing Pd on Si1−xGex/Si at room temperature (RT=300K) and low temperature (LT=77K). The Schottky barrier heights and current transport mechanisms were determined by current-voltage-temperature (I-V-T) measurements. The interface property of Pd/ Si1−xGex/Si were studied as a function of metal deposition and post annealing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 575
Copyright
Copyright © Materials Research Society 1996

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