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Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

Published online by Cambridge University Press:  01 February 2011

S.A. Vitusevich ,
M.V. Petrychuk ,
N. Klein ,
S.V. Danylyuk ,
A.E. Belyaev ,
R.V. Konakova ,
A. Yu. Avksentyev ,
A.M. Kurakin ,
P.M. Lytvyn  and
B.A. Danilchenko
...Show all authors
S.A. Vitusevich
Affiliation:
Forschungszentrum Jülich, ISG, Jülich 52425, Germany
M.V. Petrychuk
Affiliation:
Taras Shevchenko Kiev National University, Kiev 01033, Ukraine
N. Klein
Affiliation:
Forschungszentrum Jülich, ISG, Jülich 52425, Germany
S.V. Danylyuk
Affiliation:
Forschungszentrum Jülich, ISG, Jülich 52425, Germany
A.E. Belyaev
Affiliation:
Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine
R.V. Konakova
Affiliation:
Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine
A. Yu. Avksentyev
Affiliation:
Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine
A.M. Kurakin
Affiliation:
Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine
P.M. Lytvyn
Affiliation:
Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine
B.A. Danilchenko
Affiliation:
Institute of Physics, NASU, Kiev 03028, Ukraine
V. Tilak
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
J. Smart
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
A. Vertiatchikh
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
L.F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853, U.S.A.
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Abstract

Effect of small dose gamma-irradiation on electrical characteristics of AlGaN/GaN high electron mobility transistors has been investigated. Decreasing of the leakage current and its noise has been registered after dose of 1×106 Rad. As-grown heterostructures used in further for the device fabrication have been examined after the same radiation treatment. The small dose radiation results are explained within a model that takes into account relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.31
Copyright
Copyright © Materials Research Society 2003

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