Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-13T02:49:55.552Z Has data issue: false hasContentIssue false
  • English
  • Français

Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

D. V. Tsu  and
G. Lucovsky
D. V. Tsu
Affiliation:
Department of Physics, NC State Univ., Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, NC State Univ., Raleigh, NC 27695-8202
Get access

Abstract

We have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 285
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Richard, P.D., Markunas, R.J., Lucovsky, G., Fountain, G.G., Mansour, A. and Tsu, D.V., J. Vac. Sci. Technol. A 3, 867 (1985)Google Scholar
[2] Lucovsky, G. and Tsu, D.V., J. Vac. Sci. Technol. 5, (in press, July/August 1987)Google Scholar
[3] Tsu, D.V. and Lucovsky, G., Mat. Res. Soc. Symp. Proc. 77, (in press, 1987)Google Scholar
[4] Adams, A.C., Solid State Technol. 26, 135 (1983)Google Scholar
[5] Lucovsky, G., Solid State Commun. 29, 571 (1979)Google Scholar
[6] Stolen, R.H. and Walrafen, G.E., J. Chem. Phys. 64, 2623 (1976)Google Scholar
[7] Lucovsky, G., Wong, C.K. and Pollard, W.B., J. Non-Cryst. Solids 59 & 60, 839 (1983)Google Scholar