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Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

Published online by Cambridge University Press:  15 February 2011

M. B. Huang ,
U. Myler ,
T. W. Simpson ,
P. J. Simpson  and
I. V. Mitchell
M. B. Huang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
U. Myler
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
T. W. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
P. J. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
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Abstract

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The Pdoped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 1014 cm-2, and then annealed at temperatures ranging from 700–1000°C in a N2 ambient for varying durations. As P doping concentration increased from 3 x 1019 to 1 x 1020 cm-3, boron diffusivity and the immobile boron fraction decreased. Our experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

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