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Buried Oxide in Silicon by Oxygen Implantation Into Scanned Wafers

Published online by Cambridge University Press:  25 February 2011

A. Mogro-Campero ,
R.P. Love ,
N. Lewis ,
E.L. Hall  and
M.D. McConnell
A. Mogro-Campero
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301
R.P. Love
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301
E.L. Hall
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301
M.D. McConnell
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301
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Abstract

A single crystal silicon layer on an insulator is a desirable structure for applications in electronics. One of the leading processes for achieving such a structure is the formation of a buried oxide layer in silicon by heavy dose oxygen implantation. Characteristics of this material have been reported for implantation by beam scanning. In this work we report on material prepared by wafer scanning at rates such that significant temperature cycling occurs during implantation, and we use TEM and Auger analysis to investigate the differences between these samples and others prepared by the conventional technique of beam scanning. For the implantation and annealing conditions used here, we find more oxygen in the top silicon layer in the case of wafer scanning, and the oxygen concentration increases after annealing at 1150°C for 2 hours, leading to a structure of precipitates throughout the single crystal top silicon layer. For beam scanning, the oxygen concentration decreases after annealing and achieves background levels near the surface, leading to a zone which is free of precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 305
Copyright
Copyright © Materials Research Society 1985

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References

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