Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-29T03:08:03.267Z Has data issue: false hasContentIssue false

Carbon Nanotubes Grown on Metallic Wires by Cold Plasma Technique

Published online by Cambridge University Press:  11 February 2011

D. Sarangi
Affiliation:
Institute of Physics of the Complex Materials (IPMC-FSB), Swiss Federal Institute of Technology (EPFL), CH 1015 Lausanne, Switzerland.
A. Karimi
Affiliation:
Institute of Physics of the Complex Materials (IPMC-FSB), Swiss Federal Institute of Technology (EPFL), CH 1015 Lausanne, Switzerland.
Get access

Abstract

Carbon nanotubes on metallic wires may be act as electrode for the field emission (FE) luminescent devices. Growing nanotubes on metallic wires with controlled density, length and alignment are challenging issues for this kind of devices. We, in the present investigation grow carbon nanotubes directly on the metal wires by a powerful but simple technique. A novel approach has been proposed to align nanotubes during growth. Methane, acetylene and dimethylamine have been used as source gases. With the same growth conditions (viz. pressure, growth temperature and plasma) methane does not produce any nanotube but nanotubes grown with dimethylamine show shorter length and radius than acetylene. The effect of temperature to control the radius, time to control the density, plasma conditions to align the nanotubes has been focused. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Back Scattering (RBS) are used to characterize the nanotubes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Iijima, S., Nature, 354, 56 (1991).Google Scholar
2. Baughman, R. H., Zakhidov, A. A., and deHeer, W. A., Science 297, 787 (2002).Google Scholar
3. Bonard, J. M., Stöckli, T., Noury, O., and Châtelain, A., Appl. Phys. Lett. 78, 2775 (2002).Google Scholar
4. Kumar, A., and Whitesides, G. M., Appl. Phys. Lett. 63, 2002 (1993).Google Scholar
5. Kind, H., Bonard, J. M., Emmenegger, C., Nilsson, L O., Hernadi, K., Schaller, E. M., Schlapbach, L., Forró, L., and Kern, K., Adv. Mater. 11, 1285 (1999).Google Scholar
6. Gao, R., Wang, Z. L., and Fan, S., J. Phys. Chem. 104, 1227 (2000).Google Scholar
7. Bower, C., Zhu, W., Jin, S., and Zhou, O., Appl. Phys. Lett. 77, 830 (2000).Google Scholar
8. Sarangi, D., and Karimi, A., Nanotechnology (Accepted).Google Scholar