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Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

Published online by Cambridge University Press:  09 January 2013

Yongkun Sin ,
Stephen LaLumondiere ,
Brendan Foran ,
William Lotshaw ,
Steven C. Moss ,
Tae Wan Kim ,
Steven Ruder ,
Luke J. Mawst  and
Thomas F. Kuech
Yongkun Sin
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Brendan Foran
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
William Lotshaw
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Steven C. Moss
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Tae Wan Kim
Affiliation:
Electrical and Computer Engineering Dept, University of Wisconsin – Madison, Madison, WI 53706
Steven Ruder
Affiliation:
Chemical and Biological Engineering Dept, University of Wisconsin – Madison, Madison, WI 53706
Luke J. Mawst
Affiliation:
Electrical and Computer Engineering Dept, University of Wisconsin – Madison, Madison, WI 53706
Thomas F. Kuech
Affiliation:
Chemical and Biological Engineering Dept, University of Wisconsin – Madison, Madison, WI 53706
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Abstract

Multi-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Keywords

photovoltaicIII-Vmetalorganic deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 245 - 251
Copyright
Copyright © Materials Research Society 2012 

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References

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