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Carrier-Density Fluctuation Noise and the Interface Trap Density in GaN/AlGaN HFETs

Published online by Cambridge University Press:  21 March 2011

Dmitri Kotchetkov  and
Alexander A. Balandin
Dmitri Kotchetkov
Affiliation:
Department of Electrical EngineeringUniversity of California at RiversideRiverside, California 92521, U.S.A
Alexander A. Balandin
Affiliation:
Department of Electrical EngineeringUniversity of California at RiversideRiverside, California 92521, U.S.A
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Abstract

The interface trap density NT is extracted from the experimental low-frequency noise data for GaN/AlGaN heterostructure field-effect transistors (HFETs). The trap density is determined based on the carrier-density fluctuation formalism. We show that the value of NT approximately defines the noise response of different GaN/AlGaN HFETs fabricated on the same wafer and it weakly depends on the gate bias. The dependence is due to the non-uniformity of the trap distribution. A model for computer simulation of the low-frequency noise in GaN devices is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.13
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Cai, S.J., Li, R., Chen, Y.L., Wu, W.G., Thomas, S.G., and Wang, K.L., Electron. Lett. 34, 2354 (1998).Google Scholar
2. Rumyantsev, S., Levinshtein, M.E., Gaska, R., Shur, M.S., Khan, A., Yang, J.W., Simin, G., Ping, A., Adesida, T., Phys. Stat. Sol. A 176, 201 (1999).Google Scholar
3. Balandin, A., Wang, K.L., Cai, S.J., Li, R., Viswanathan, C.R., Wang, E.N., and Wojtowicz, M., J. Electronic Materials 29, 297 (2000).Google Scholar
4. Balandin, A., Morozov, S., Wijeratne, G., Cai, S.J., Li, R., Li, J., Wang, K.L., Viswanathan, C.R., and Dubrovskii, Yu., Appl. Phys. Lett. 75, 2064 (1999).Google Scholar
5. Balandin, A., Cai, S., Li, R., Wang, K.L., Rao, V. Ramgopal, and Viswanathan, C. R., IEEE Electron Device Lett. 19, 475 (1998).Google Scholar
6. Kogan, Sh. in Electronic Noise and Fluctuations in Solids (Cambridge University Press, 1996).Google Scholar
7. Balandin, A., Morozov, S., Cai, S.J., Li, R., Wang, K.L., Viswanathan, C.R., IEEE Trans on Microwave Theory & Tech, 47, 1413 (1999).Google Scholar
8. Levinshtein, M.E., Rumyantsev, S.L., Gaska, R., Yang, J.W., Shur, M.S., Appl. Phys. Lett., 73, 1089 (1998).Google Scholar
9. Ho, W.Y., Surya, C., Tong, K.Y., Kim, W., Bochkarev, A.E., and Morkoc, H., IEEE Trans on Electron Devices, 46, 1099 (1999).Google Scholar
10. Chang, J., Abidi, A.A., Viswanathan, C.R., IEEE Trans. Electron Devices 41, 1965 (1994).Google Scholar
11. Celik-Butler, Z. and Hsiang, T.Y., Solid State Electon., 30, 419 (1987).Google Scholar