Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-10T22:06:04.279Z Has data issue: false hasContentIssue false
  • English
  • Français

Cellular Domain Architecture of Stress-free Epitaxial Ferroelectric Films

Published online by Cambridge University Press:  21 March 2011

S. P. Alpay ,
A. L. Roytburd ,
V. Nagarajan ,
L. A. Bendersky  and
R. Ramesh
S. P. Alpay
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269, U.S.A
A. L. Roytburd
Affiliation:
Department of Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, U.S.A
V. Nagarajan
Affiliation:
Department of Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, U.S.A
L. A. Bendersky
Affiliation:
Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A
R. Ramesh
Affiliation:
Department of Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, U.S.A
Get access

Abstract

Epitaxial ferroelectric films undergoing a cubic-tetragonal phase transformation relax internal stresses due to the structural phase transformation and the difference in the thermal expansion coefficients of the film and the substrate by forming polydomain structures. The most commonly observed polydomain structure is the c/a/c/a polytwin that relieves the internal stresses only partially. Relatively thicker films may completely reduce internal stresses if all three variants of the ferroelectric phase are brought together such that the film has the same in-plane size as the substrate. In this article, we provide experimental evidence on the formation of the 3-domain structure based on transmission electron microscopy in 450 nm thick (001) PbZr0.2Ti0.8O3 films on (001) SrTiO3 grown by pulsed laser deposition. X-ray diffraction studies show that the film is fully relaxed. Experimental data is analyzed in terms of a domain stability map.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC8.8.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Speck, J. S. and Pompe, W., J. Appl. Phys., 76, 466 (1994).10.1063/1.357097Google Scholar
2. Alpay, S. P., Nagarajan, V., Bendersky, L. A., Vaudin, M. D., Aggarwal, S., Ramesh, R., and Roytburd, A. L., J. Appl. Phys., 85, 3271 (1999).10.1063/1.369670Google Scholar
3. Kwak, B. S., Erbil, A., Budai, J. D., Chrisholm, M. F., Boatner, L. A., and Wilkens, B. J., Phys. Rev. B, 49, 14865 (1994).10.1103/PhysRevB.49.14865Google Scholar
4. Foster, C. M., Bai, G. R., Csencsits, R., Vetrone, J., Jammy, R., Wills, L. A., Carr, E., and Amano, J., J. Appl. Phys., 81, 2349 (1997).10.1063/1.364239Google Scholar
5. Roitburd, A. L., Phys. Stat. Sol. (a), 37, 329 (1976); A. L. Roytburd and Y. Yu, Ferroelectrics, 144, 137 (1993).10.1002/pssa.2210370141Google Scholar
6. Alpay, S. P. and Roytburd, A. L., MRS Proc., 474, 407 (1997).10.1557/PROC-474-407Google Scholar
7. Roytburd, A. L., J. Appl. Phys., 83, 228; 239 (1998).10.1063/1.366677Google Scholar
8. Hsu, W.-Y. and Raj, R., Appl. Phys. Lett., 67, 792 (1995);Y. Kang, M., Ku, J. K., and S. Baik, J. Appl. Phys., 78, 2601 (1995).10.1063/1.115469Google Scholar
9. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology; Vol. 16, edited by Hellwege, K.-H. and Hellwege, A. M. (Springer Verlag, Berlin, 1981).Google Scholar
10. Alpay, S. P. and Roytburd, A. L., J. Appl. Phys., 83, 4714 (1998).10.1063/1.367260Google Scholar
11. Nagarajan, V., Jenkins, I. G., Alpay, S. P., Li, H., Aggarwal, S., Salamanca-Riba, L., Roytburd, A. L., and Ramesh, R., J. Appl. Phys., 86, 595 (1999).10.1063/1.370772Google Scholar
12. Ganpule, C. S., Nagarajan, V., Li, H., Ogale, A. S., Steinhauer, D. E., Aggarwal, S., Williams, E., Ramesh, R., and Wolf, P. De, Appl. Phys. Lett., 77, 292 (2000).10.1063/1.126954Google Scholar
13. Roytburd, A.L., Alpay, S.P., Bendersky, L.A., Nagarajan, V., and Ramesh, R., J. Appl. Phys., in press.Google Scholar