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Changes in the Density of States in a-Si:H with the Generation and Annealing of Light-Induced Defects

Published online by Cambridge University Press:  26 February 2011

K. Shepard ,
Z E. Smith ,
S. Aljishi  and
S. Wagnera
K. Shepard
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
Z E. Smith
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
S. Aljishi
Affiliation:
Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 7000 Stuttgart, West Germany
S. Wagnera
Affiliation:
Princeton University, Princeton, NJ 08544
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Abstract

Through sub-bandgap absorption spectra and photoconductivity measurements of high-quality hydrogenated amorphous silicon (a-Si:H), changes in the electronic density of states with light-soaking and subsequent annealing are qualitatively described. Included is a more complete understanding of the role of deep defects as recombination centers. In this way, the simple power laws of Stutzmann, Jackson, and Tsai for the light-induced degradation of defect density and photoconductivity are. retained in the modified forms Evidence is also presented that the states closest to midgap, those states that act as effective recombination centers, are the first to anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 147
Copyright
Copyright © Materials Research Society 1988

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