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Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by Mocvd

Published online by Cambridge University Press:  10 February 2011

T. Egawa ,
H. Ishikawa ,
K. Yamamoto ,
T. Jimbo  and
M. Umeno
T. Egawa
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Ishikawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokisocho, Showa-ku, Nagoya 466, Japan
K. Yamamoto
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokisocho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokisocho, Showa-ku, Nagoya 466, Japan
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Abstract

We report here the characterization of metalorganic chemical vapor deposition grown GaN layer on sapphire substrate with (0001) orientation (c-face). The 2.4-μm-thick GaN layer on sapphire substrate showed the specular surface morphology. The full width at half-maximum of X-ray double crystal rocking curve was 214 arcsec. Photoluminescence measurement at 4.2 K showed the emissions from the two free excitons (FEA and FEB), acceptor and donor bound excitons (ABE and I2) and the first excited state of FEA. The etch pit density (EPD) was measured using molten KOH etching was 2∼4×108 cm-2 . The electron mobilities from Hall effect measurement were 585 cm2/V·s for the electron concentration 1.1×1017 cm-3 at 300 K, and 1217 cm2/V·s for 2.4×1016 cm-3 at 77 K, respectively. The measured mobility values are much higher than the previously reported values. The fabricated Pt/Ti/Au Schottky diode on GaN layer revealed the ideality factor 1.04 and the barrier height 0.9 eV which was calculated from forward current-voltage characteristics. The reverse current was as low as 1 mA for the reverse voltage 100 V. The barrier height was also determined to be 1.4 eV from the capacitance-voltage measurement. The electron-beam induced current observations were performed on the fabricated GaN Schottky diode. The dark spot was observed and the dark spot density was estimated to be 2×108 cm-2, which was comparable to the EPD measured using molten KOH etching. GaN metal semiconductor field effect transistors (MESFETs) with 3-μm gate-length and 15-μm gate-width have also been fabricated on high-quality GaN single crystalline layer. Maximum transconductance 25 mS/mm and the drain-source current 210 mA/mm have been achieved for the GaN MESFET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1101
Copyright
Copyright © Materials Research Society 1998

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References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwase, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwase, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Proceedings of The Second International Conference on Nitride Semiconductors, Tokushima, 444 (1997).Google Scholar
3. Khan, M. A., Kuznia, J. N., Bhattarai, A. R. and Olson, D. T., Appl. Phys. Lett. 62, 1786 (1993).Google Scholar
4. Binari, S. C., Electrochemical Society Proceedings, 95–21, 136, Reno, 1995.Google Scholar
5. Khan, M. A., Bhattarai, A., Kuznia, J. N. and Olson, D. T., Appl. Phys. Lett. 63, 1214 (1993).10.1063/1.109775Google Scholar
6. Burm, J., Schaff, W. J., Eastman, L., Amano, H. and Akasaki, I., Appl. Phys. Lett. 68, 2849 (1996).Google Scholar
7. Aktas, O., Fan, Z. F., Botchkarev, A., Mohammad, S. N., Roth, M., Jenkins, T., Kehias, L. and Morkoc, H., IEEE Electron Device Lett. 18, 293 (1997).Google Scholar
8. Petroff, P. and Hartman, R. L., Appl. Phys. Lett. 23,469 (1973).Google Scholar
9. Bergman, J. P., Harris, C., Monemar, B., Amano, H. and Akasaki, I., Proc. Mat. Res. Soc. 395, 709 (1996).Google Scholar
10. Kozawa, T., Kachi, T., Ohwaki, T. and Taga, Y., J. Electrochem. Soc. 143, L17 (1996).Google Scholar
11. Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett. 66, 1249 (1995).Google Scholar