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Characterization and Manipulation of Exposed Ge Nanocrystals

Published online by Cambridge University Press:  21 March 2011

I.D. Sharp ,
Q. Xu ,
C.Y. Liao ,
D.O. Yi ,
J.W. Ager III ,
J.W. Beeman ,
K.M. Yu ,
D.N. Zakharov ,
Z. Liliental-Weber  and
D. C. Chrzan
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I.D. Sharp
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Q. Xu
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
C.Y. Liao
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
D.O. Yi
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Applied Science and Technology Graduate Group, University of California, Berkeley, Berkeley, CA 94720
J.W. Ager III
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J.W. Beeman
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
K.M. Yu
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
D.N. Zakharov
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
D. C. Chrzan
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
E.E. Haller
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
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Abstract

Isotopically pure 70Ge and 74Ge nanocrystals embedded in SiO2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M13.3.1
Copyright
Copyright © Materials Research Society 2004

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