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Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

Published online by Cambridge University Press:  01 February 2011

Motoaki Iwaya ,
Yoshizane Okadome ,
Yosuke Tsuchiya ,
Daisuke Iida ,
Aya Miura ,
Hiroko Furukawa ,
Akira Honshio ,
Yasuto Miyake ,
Satoshi Kamiyama  and
Hiroshi Amano
...Show all authors
Motoaki Iwaya
Affiliation:
iwaya@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku,, Nagoya, N/A, 468-8502, Japan, +81-52-838-2430, +81-52-832-1244
Yoshizane Okadome
Affiliation:
m0534008@ccmailg.meijo-u.ac.jp
Yosuke Tsuchiya
Affiliation:
m0534015@ccmailg.meijo-u.ac.jp
Daisuke Iida
Affiliation:
a302z010@ccmailg.meijo-u.ac.jp
Aya Miura
Affiliation:
a302z103@ccmailg.meijo-u.ac.jp
Hiroko Furukawa
Affiliation:
m0534028@ccmailg.meijo-u.ac.jp
Akira Honshio
Affiliation:
m0434036@ccmailg.meijo-u.ac.jp
Yasuto Miyake
Affiliation:
m0434041@ccmailg.meijo-u.ac.jp
Satoshi Kamiyama
Affiliation:
skami@ccmfs.meijo-u.ac.jp
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp
Isamu Akasaki
Affiliation:
akasaki@ccmfs.meijo-u.ac.jp
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Abstract

The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress.

Keywords

nitridecrystal growthpiezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF07-08-EE05-08
Copyright
Copyright © Materials Research Society 2006

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References

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