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Characterization of Ti/TiN and TiN Conductive Layer for High Temperature MEMS Devices

Published online by Cambridge University Press:  01 February 2011

Peter Lange ,
Birger Ohlsen ,
Sebastian Puls  and
Joerg Syre
Peter Lange
Affiliation:
Fraunhofer Institut fuer Siliziumtechnologie, Fraunhofer Str.1, 25524 Itzehoe, Germany
Birger Ohlsen
Affiliation:
FH Westkueste, Fritz-Thiedemann-Ring 20, 25746 Heide, Germany
Sebastian Puls
Affiliation:
Fraunhofer Institut fuer Siliziumtechnologie, Fraunhofer Str.1, 25524 Itzehoe, Germany
Joerg Syre
Affiliation:
Fraunhofer Institut fuer Siliziumtechnologie, Fraunhofer Str.1, 25524 Itzehoe, Germany
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Abstract

The effects of temperature on micro heaters made of Ti/TiN stacks and pure TiN layers on bulk micromachined membranes have been studied. Ti/TiN stacks show a thermal stability up to 380°C, beyond that temperature an enhanced interaction within the stack and/or with adjacend layers leads to a degradation of the resistance. The pure TiN layers withstand temperatures up to 600 °C, this limitation is only given by the mechanical stability of the membran stack, which is destroyed beyond this temperature. These layers are suitable for sensors in which an elevated temperature provided by heating lines on a membran for thermal isolation and fast response is necessary for functionality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J4.2
Copyright
Copyright © Materials Research Society 2005

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References

[1] Chung, Gwiy-Sang, Sensors and Actuators A 112, 55 (2004)Google Scholar
[2] Najafi, N., Wise, K.D and Schwank, J. W., IEEE Trans. on Electron Devices 41, 1770 (1994)Google Scholar
[3] Neda, T.; Nakamura, K. and Takumi, T., Eurosensors IX, Digest of Technical Papers, p. 548 (1995)Google Scholar
[4] Wang, S., Raaijmakers, I., Burrow, B.J., Suthar, S., Redkar, S. and Kim, K., J. Appl. Phys. 68, 5176 (1990)Google Scholar