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Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(Diethylamido)Tantalum and Ammonia

Published online by Cambridge University Press:  10 February 2011

Sung-Lae Cho ,
Ki-Bum Kim ,
Seok-Hong Min  and
Hyun-Kook Shin
Sung-Lae Cho
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
Ki-Bum Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
Seok-Hong Min
Affiliation:
Research Institute for Advanced Materials, Seoul National University, Seoul, Korea
Hyun-Kook Shin
Affiliation:
Utra Pure Chemicals, Inc., Suwon, Korea
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Abstract

Tantalum nitride (TaN) films were deposited by using pentakis(diethylamido)tantalum and ammonia. The activation energies of the surface reaction were obtained with the NH3 flow rate. In addition, the resistivity, composition, crystal structure, and microstructure were systematically studied with the NH3 flow rate from 0 to 25 sccm. The resistivity of the asdeposited film was decreased as the NH3 flow rate was increased, but it was increased at the NH3 flow rate of 25 sccm. The minimum value of resistivity is about 7000 μΩ-cm at the NH3 flow rate of 20 sccm. The carbon content in the film was decreased down to 1 at.% as the NH3 flow rate was increased up to 25 sccm by Auger electron spectroscopy. Rutherford backscattering spectrometry showed that the N/Ta ratio is about 1.75, which is not considerably changed with the NH3 flow rate. In spite of this high nitrogen content in the film, it was revealed that the fcc TaN was formed by x-ray diffractometry and transmission electron microscopy. The etch-pits test showed that 50-nm-thick TaN films deposited at the NH3 flow rate of 0 and 25 sccm prevented the diffusion of Cu into the Si substrate at the annealing condition of 500 °C and 550 °C for 1 hour, respectively. The step coverage was estimated as over 80 % at the NH3 flow rate of 0 sccm and below 10 % with the addition of NH3 in 0.5 μm × 1.5 μm contacts by cross-section scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 531
Copyright
Copyright © Materials Research Society 1998

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References

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