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Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures

Published online by Cambridge University Press:  01 February 2011

Kathrin Sebald ,
Henning Lohmeyer ,
Jürgen Gutowski ,
Tomohiro Yamaguchi  and
Detlef Hommel
Kathrin Sebald
Affiliation:
ksebald@ifp.uni-bremen.de, Institute of Solid State Physics, P.O. Box 330440, Bremen, Bremen, 28334, Germany
Henning Lohmeyer
Affiliation:
hl@ifp.uni-bremen.de
Jürgen Gutowski
Affiliation:
gutowski@ifp.uni-bremen.de
Tomohiro Yamaguchi
Affiliation:
yamaguchi@ifp.uni-bremen.de
Detlef Hommel
Affiliation:
hommel@ifp.uni-bremen.de
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Abstract

We present comparative micro-photoluminescence measurements on InGaN/GaN quantum well and quantum dot samples. Single sharp emission lines were investigated for both kinds of samples as a function of temperature and excitation density. For the sharp emission lines of the quantum dots and the strong localization centers in the quantum well samples comparable experimental findings were obtained such as the independence of their spectral position of the excitation density and the observation of binding and antibinding multiexcitonic states giving clear evidence for the quantum dot nature of localization centers.

Keywords

optical propertiesself-assemblynitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF25-02
Copyright
Copyright © Materials Research Society 2006

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References

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