Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-29T10:54:51.118Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Published online by Cambridge University Press:  01 February 2011

Xin-Ping Qu ,
Jing-Jing Tan ,
Mi Zhou ,
Tao Chen ,
Guo-Ping Ru  and
Bing-Zong Li
Xin-Ping Qu
Affiliation:
xpqu@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Fudan University, Shanghai, 200433, Shanghai, Shanghai, 200433, China, People's Republic of, 86-21-65643561, 86-21-65643768
Jing-Jing Tan
Affiliation:
042052023@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Mi Zhou
Affiliation:
052052022@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Tao Chen
Affiliation:
052021066@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Guo-Ping Ru
Affiliation:
gpru@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Bing-Zong Li
Affiliation:
bzli@fudan.edu.cn, Fudan University, Department of microelectronics, Dept. of microelectronics,, 220#, Handan Road,, Shanghai, 200433, China, People's Republic of
Get access

Abstract

The diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu/Ru/Ta or TaN /Si structure is much more improved than that of the Cu/Ru/Si structure without the interlayer. However, the Cu/Ru/TaN/Si shows better thermal stability than the Cu/Ru/Ta/Si structure, which should be attributed to the amorphous nature of the TaN interlayer. The microstructure evolution of the Cu/Ru/Ta (TaN)/Si structure during annealing is discussed. The results show that the Ru/TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.

Keywords

barrier layerRuCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chan, R., Arunagiri, T. N., Zhang, Y., Chyan, O., Wallace, R. M., Kim, M. J., and Hurd, T. Q., Electrochem. Solid-State Lett. 7, G154 (2004).Google Scholar
2 Chyan, O., Arunagiri, T. N., and Ponnuswamy, T., J. Electrochem. Soc. 150, C347 (2003).Google Scholar
3 Arunagiri, T. N., Zhang, Y., Chyan, O., El-Bouanani, M., Kim, M. J., Chen, K. H., Wu, C. T., and Chen, L. C., Appl. Phys. Lett. 86, 083104 (2005).Google Scholar
4 Wang, Q., Ekerdt, J. G., Gay, D.,Sun, Y.-M., and White, J. M., Appl. Phys. Lett. 84, 1380 (2004).Google Scholar
5 Josell, D., Wheeler, D., Witt, C., Moffat, T. P., Electrochem. Solid-State Lett. 6, C143 (2003).Google Scholar
6 Liu, J., Lei, J., Magtoto, N., Rudenja, S., Garza, M., and Kelber, J. A., J. Electrochem. Soc. 152, G115 (2005).Google Scholar
7 Kim, H., Koseki, T., Ohba, T., Ohta, T., Kojima, Y., and Sato, H., J. Electrochem. Soc. 152, G594 (2005)Google Scholar
8 Kwon, O.-K., Kim, J.-H., Park, H.-S., and Kang, S.-W., J. Electrochem. Soc. 151, G109 (2004).Google Scholar
9 Zhao, X., Magtoto, N. P., Kelber, J. A., Mat. Res. Soc. Sym. Proc. 812, 129–134 (2004).Google Scholar
10 Min, K. H., Chun, K. C., and Kim, K. B., J. Vac. Sci. Tech. B 14, 3263 (1996).Google Scholar
11 Tan, Jing-Jing, Qu, Xin-Ping, Xie, Qi, Zhou, Yi, Ru, Guo-Ping, and Li, Bing-Zong, Thin Solid Films 504, 231 (2006).Google Scholar