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Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals

Published online by Cambridge University Press:  22 February 2011

Jun-ichi Chikawa ,
Fumio Sato  and
Tadasu Sunada
Jun-ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Fumio Sato
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Tadasu Sunada
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
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Abstract

Atomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 193
Copyright
Copyright © Materials Research Society 1984

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References

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