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Consecutive Selective Chemical Vapor Deposition of Copper and Aluminum from Organometallic Precursors

Published online by Cambridge University Press:  22 February 2011

Stephen M. Fine ,
Paul N. Dyer  and
John A. T. Norman
Stephen M. Fine
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown, PA 18195
Paul N. Dyer
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown, PA 18195
John A. T. Norman
Affiliation:
Schumacher Co., 1969 Palomar Oaks Way, Carlsbad, CA 92009.
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Abstract

For the next generation of integrated microcircuits, there exists a need in the electronics industry for high conductivity, electromigration resistant metallization that can be deposited selectivity by chemical vapor deposition techniques. This paper describes a new process for depositing copper/aluminum metallization selectively onto diffusion barrier surfaces in two consecutive steps. First copper is selectively deposited by OMCVD ontoa patterned diffusion barrier surface using a Cu(I)(hfac)(olefin) precursor. Selective copper deposition onto tungsten or titanium nitride is achieved at 150°C and 100 mtorr. Aluminum is then selectively deposited onto copper using trimethylaminealane as the OMCVDprecursor. Trimethylaminealane gives good selectivity for aluminum deposition onto coppersurfaces over a temperature range of 100–120°C without the use of a surface activating agent. A small amount of copper diffuses into the as deposited aluminum layer atthe low deposition temperature. Complete diffusion of copper into aluminum is achieved by a rapid thermal anneal at a higher temperature. The selectivity of aluminum deposition onto copper surfaces is far superior to that observed for aluminum deposition onto other metal surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 329
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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