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Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

Published online by Cambridge University Press:  01 February 2011

Hideaki Zama ,
Yuuji Nishimura ,
Michiyo Yago  and
Mikio Watanabe
Hideaki Zama
Affiliation:
hideaki_zama@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan, +81-55-998-1546, +81-55-998-1518
Yuuji Nishimura
Affiliation:
hideaki_zama@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Michiyo Yago
Affiliation:
hideaki_zama@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Mikio Watanabe
Affiliation:
hideaki_zama@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
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Abstract

Chemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Keywords

chemical vapor deposition (CVD) (deposition)Cufilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-27
Copyright
Copyright © Materials Research Society 2007

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References

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