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Correlation of Size and Photoluminescence for Ge Nanocrystals in SiO2 Matrices

Published online by Cambridge University Press:  28 February 2011

C.M Yang ,
K.V. Shcheglov ,
M.L. Brongersma ,
A Polman  and
H.A. Atwater
C.M Yang
Affiliation:
California Institute of Technology, Pasadena, CA 91125
K.V. Shcheglov
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M.L. Brongersma
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
A Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
H.A. Atwater
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Synthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model[l] to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 181
Copyright
Copyright © Materials Research Society 1995

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References

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