Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-14T17:23:17.989Z Has data issue: false hasContentIssue false
  • English
  • Français

CVD Growth and Passivation of W and TiN Nanocrystals for Non-volatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Guillaume Gay ,
Djamel Belhachemi ,
Jean-Philippe Colonna ,
Stéphane Minoret ,
Arnaud Beaurain ,
Bernard Pelissier ,
Marie-Christine Roure ,
Dominique Lafond ,
Eric Jalaguier  and
Gabriel Molas
...Show all authors
Guillaume Gay
Affiliation:
guillaume.gay@cea.frgay.guillaume@gmail.com, CEA LETI MINATEC, Grenoble, France
Djamel Belhachemi
Affiliation:
djamel.belhachemi@cea.fr, CEA LETI MINATEC, Grenoble, France
Jean-Philippe Colonna
Affiliation:
jean-philippe.colonna@cea.fr, CEA LETI MINATEC, Grenoble, France
Stéphane Minoret
Affiliation:
stephane.minoret@cea.f, CEA LETI MINATEC, Grenoble, France
Arnaud Beaurain
Affiliation:
arnaud.beaurain@cea.fr, CNRS-LTM, Grenoble, France
Bernard Pelissier
Affiliation:
bernard.pelissier@cea.fr, CNRS-LTM, Grenoble, France
Marie-Christine Roure
Affiliation:
Marie-christine.roure@cea.fr, CEA LETI MINATEC, Grenoble, France
Dominique Lafond
Affiliation:
dominique.lafond@cea.fr, CEA LETI MINATEC, Grenoble, France
Eric Jalaguier
Affiliation:
eric.jalaguier@cea.fr, CEA LETI MINATEC, Grenoble, France
Gabriel Molas
Affiliation:
gabriel.molas@cea.fr, CEA LETI MINATEC, Grenoble, France
Thierry Baron
Affiliation:
thierry.baron@cea.fr, CNRS-LTM, Grenoble, France
Barbara De Salvo
Affiliation:
barbara.desalvo@cea.fr, CEA LETI MINATEC, Grenoble, France
Get access

Abstract

In this paper, we present CVD (Chemical Vapor Deposition) growth and passivation of tungsten (W) and titanium nitride (TiN) nanocrystals (NCs) on silicon dioxide and silicon nitride for use as charge trapping layer in floating gate memory devices. NCs are deposited in an 8 inches industrial CVD Centura tool. W and TiN are chosen for being compatible with MOSFET memory fabrication process. For protecting NCs from oxidation, a silicon shell is selectively deposited on them. Moreover, for a better passivation, TiN NCs are encapsulated in silicon nitride (Si3N4) in order to get rid of oxidation issues. After high temperature annealing (1050°C under N2 during 1 minute) XPS measurements point out that NCs are still metallic, which makes them good candidates for being used as charge trapping layer in floating gate memories.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructuremetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G06-06
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chindalore, G., Yater, J., Gasquet, H., Suhail, M., Kang, S., Hong, C. M., Ellis, N., Rinkenberger, G., Shen, J., Herrick, M., Malloch, W., Syzdek, R., Baker, K., Chang, K., “Embedded split-gate flash memory with silicon nanocrystals for 90nm and beyond” VLSI Tech. Dig., pp.136–137, 2008.10.1109/VLSIT.2008.4588592Google Scholar
2 Gerardi, C., Molas, G., Albini, G., Tripiciano, E., Gely, M., Emmi, A., Fiore, O., Nowak, E., Mello, D., Vecchio, M., Masarotto, L., Portoghese, R., Salvo, B. De, Deleonibus, S., Maurelli, A., “Performance and reliability of a 4Mb Si nanocrystal NOR Flash memory with optimized 1T memory cells” IEEE Tech. Dig. of IEDM, pp.821–824, 2008 Google Scholar
3 Molas, G., Bocquet, M., Buckley, J., Colonna, J. P., Masarotto, L., Grampeix, H., Martin, F., Vidal, V., Toffoli, A., Brianceau, P., Vermande, L., Scheiblin, P., Gely, M., Papon, A. M., Auvert, G., Perniola, L., Licitra, C., Veyron, T., Rochat, N., Bongiorno, C., Lombardo, S., Salvo, B. De, and Deleonibus, S., “Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications” IEEE Tech. Dig. of IEDM, pp.453–456, 2007.10.1109/IEDM.2007.4418971Google Scholar
4 Samanta, S. K., Tan, Zerlinda Y. L., Yoo, Won Jong, Samudra, Ganesh, and Lee, Sungjoo, “Self-assembled tungsten nanocrystals in high-k dielectric for nonvolatile memory application” J. Vac. Sci. Technol. B Volume 23, Issue 6, pp. 2278–2283 (November 2005)10.1116/1.2083930Google Scholar
5 Dufourcq, J., Bodnar, S., Gay, G., Lafond, D., Mur, P., Molas, G., Nieto, J. P., Vandroux, L., Jodin, L., Gustavo, F. and Baron, Th. “High density platinum nanocrystals for non-volatile memory applications”, Appl. Phys. Lett. 92, 073102 (2008)10.1063/1.2840188Google Scholar
6 Pelissier, B., Beaurain, A., Barnes, J.P., Gassilloud, R., Martin, F. and Joubert, O., “Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air”, Pelissier, B. et al., Microelectron. Eng. Volume 85, Issue 9, September 2008, Pages 1882–1887 10.1016/j.mee.2008.06.012Google Scholar