Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2025-01-01T08:33:57.692Z Has data issue: false hasContentIssue false
  • English
  • Français

Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes

Published online by Cambridge University Press:  31 January 2011

Lin Li ,
Zheng Yang  and
Jianlin Liu
Lin Li
Affiliation:
lli@ee.ucr.edu, University of California, Riverside, Electrical Engineering, Riverside, California, United States
Zheng Yang
Affiliation:
zyang@ee.ucr.edu, University of California, Riverside, Electrical Engineering, Riverside, California, United States
Jianlin Liu
Affiliation:
jianlin@ee.ucr.edu, University of California, Riverside, Electrical Engineering, Riverside, California, United States
Get access

Abstract

n-ZnO/i-CdZnO thin film was grown on p-type Si substrate by plasma-assisted molecular-beam epitaxy (MBE). Rectifying I-V curves show typical diode characteristics. Cyan electroluminescence emissions at around 473 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Room temperature photoluminescence verifies the electroluminescence emissions come from CdZnO layer.

Keywords

molecular beam epitaxy (MBE)luminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H01-09
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Look, I. D. C., Mater. Sci. Eng., B 80, 383 (2001).10.1016/S0921-5107(00)00604-8Google Scholar
2 Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y. and Yoshida, Y., Yasuda, T. and Segawa, Y., Appl. Phys. Lett. 72, 2466 (1998).10.1063/1.121384Google Scholar
3 Makino, T., Segawa, Y., Kawasaki, M., Ohtomo, A., Shiroki, R., Tamura, K., Yasuda, T., and Koinuma, H., Appl. Phys. Lett. 78, 1237 (2001).10.1063/1.1350632Google Scholar
4 Shigemori, S., Nakamura, A., Ishihara, J., Aoki, T., and Temmyo, J., Jpn. J. Appl. Phys. 43, L1088 (2004).10.1143/JJAP.43.L1088Google Scholar
5 Sadofev, S., Blumstengel, S., Cui, J., Puls, J., Rogaschewski, S., Schafer, P., and Henneberger, F., Appl. Phys. Lett. 89, 201907 (2006).10.1063/1.2388250Google Scholar
6 Yang, Z., Li, L., Zuo, Z., and Liu, J. L., J. Cryst. Growth, (in press).Google Scholar
7 Wang, X. J., Buyanova, I. A., Chen, W. M., Izadifard, M., Rawal, S., Norton, D. P., Pearton, S. J., Osinsky, A., Dong, J. W., and Dabiran, A., Appl. Phys. Lett. 89, 151909 (2006).10.1063/1.2361081Google Scholar
8 Nakamura, A., Ohashi, T., Yamamoto, K., Ishihara, J., Aoki, T., Temmyo, J. and Gotoh, H., Appl. Phys. Lett. 90, 093512 (2007).10.1063/1.2709913Google Scholar
9 Ferro, R. and Rodríguez, J. A., Sol. Energy Mater. Sol. Cells 64, 363 (2000)10.1016/S0927-0248(00)00228-2Google Scholar
10 Mandalapu, L. J., Yang, Z., Xiu, F. X., Zhao, D. T., and Liu, J. L., Appl. Phys. Lett. 88, 112108 (2006).10.1063/1.2186516Google Scholar