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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 100>

Published online by Cambridge University Press:  01 February 2011

Masashi Kato ,
Masaya Ichimura ,
Eisuke Arai  and
Shigehiro Nishino
Masashi Kato
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN.
Masaya Ichimura
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN.
Eisuke Arai
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN.
Shigehiro Nishino
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology Gokiso, Showa, Nagoya 466-8555, JAPAN.
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Abstract

Epitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.11
Copyright
Copyright © Materials Research Society 2002

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