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Deep Level Transient Spectroscopy Study of Dislocations in SiGe/Si Heterostructures

Published online by Cambridge University Press:  01 February 2011

Jinggang Lu ,
Yongkook Park  and
George A Rozgonyi
Jinggang Lu
Affiliation:
jlu7@ncsu.edu, North Carolina State University, Dept of Materials Science and Engineering, 3070 Engineering Building-1, 911 Partners Way, Dept of Materials Science&Engineering, Raleigh, NC, 27695-7907, United States
Yongkook Park
Affiliation:
ypark2@ncsu.edu, North Carolina State University, Dept of Materials Science and Engineering, Raleigh, NC, 27695-7907, United States
George A Rozgonyi
Affiliation:
rozgonyi@ncsu.edu, North Carolina State University, Dept of Materials Science and Engineering, Raleigh, NC, 27695-7907, United States
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Abstract

Examination of dislocations in the as-grown and annealed SiGe/Si heterostructures by DLTS indicates the three strong DLTS bands from 70 to 270K in the as-grown sample are likely related to intrinsic point defects or dislocation trails. A small amount of Fe at dislocations dramatically increases their electrical activity, and the trap concentration due to Fe-decorated dislocations can well exceed the total Fe impurities presented along dislocations. Through examining the competitive trapping of Fe at boron and dislocations, it is suggested that Fe trapping only happens at disordered sites along dislocations, such as kinks.

Keywords

Sidislocationsdeep level transient spectroscopy (DLTS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F09-04
Copyright
Copyright © Materials Research Society 2007

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