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Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm

Published online by Cambridge University Press:  01 February 2011

M. Asif Khan
M. Asif Khan*
Affiliation:
asif@engr.sc.edu, Univ. of South Carolina, Electrical Engineering, Rm 3A79, 301 Main St, Columbia, SC, 29208, United States
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Abstract

In this paper we will describe the problems in growth and fabrication of deep UV LED devices and the approaches that we have used to grow AlGaN-based multiple quantum well deep UV LED structures and to overcome issues of doping efficiency, cracking, and slow growth rates both for the n- and the p-type layers of the device structures. Several innovations in structure growth, device structure design and fabrication and packaging have led to the fabrication of devices with emission from 250-300 nm and cw-milliwatt powers at pump currents of only 20 mA (Vf ≤ 6 V). Record wall plug efficiencies above 1.5 % are now achievable for devices with emission at 280 nm. Thermal management and a proper device design are not only key factors in achieving these record performance numbers but are also crucial to device reliability. We will also discuss some of our initial research to clarify the factors influencing the lifetime of the deep UV LEDs. In addition to our own work, we will review the results from the excellent research carried out at several other laboratories worldwide.

Keywords

metalorganic depositionnitrideoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF01-01
Copyright
Copyright © Materials Research Society 2006

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References

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