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Deep-Level Defects in Electron Irradiated 6H-SiC

Published online by Cambridge University Press:  01 February 2011

Michal Sebastian Kozubal ,
Pawel Kaminski ,
Stanislaw Warchol ,
Katarzyna Racka-Dzietko ,
Krzysztof Grasza  and
Emil Tymicki
Michal Sebastian Kozubal
Affiliation:
mskozub@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, Poland
Pawel Kaminski
Affiliation:
pawel.kaminski@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, Poland
Stanislaw Warchol
Affiliation:
stanislaw.warchol@ichtj.waw.pl, Institute of Nuclear Chemistry and Technology, Warsaw, Poland
Katarzyna Racka-Dzietko
Affiliation:
katarzyna.racka@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, Poland
Krzysztof Grasza
Affiliation:
krzysztof.grasza@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, Poland
Emil Tymicki
Affiliation:
emil.tymicki@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, Poland
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Abstract

An effect of electron irradiation on the concentrations of deep-level centers in C-rich and Si-rich 6H-SiC wafers is investigated. In the former material, the main deep-level centers with activation energies of Ec-0.50, Ec-0.64 and Ec-0.67 eV are found to be related to dicarbon interstitials and CiNC complexes located in hexagonal and quasi-cubic lattice sites, respectively. In the latter material, the dicarbon interstitials are dominant after the irradiation with 1.5-MeV electrons. At the energy of bombarding electrons equal to 0.3 and 0.7 MeV, the activation energies of the dominant deep-level centers are Ec-0.38 and Ec-0.52 eV, respectively. The first center is related to carbon vacancies and the second to silicon interstitials.

Keywords

deep level transient spectroscopy (DLTS)defectselectron irradiation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B05-03
Copyright
Copyright © Materials Research Society 2010

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