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Deformation-induced Transformations of Nanocrystalline Ge-Si Film During Indentation

Published online by Cambridge University Press:  01 February 2011

Ziwen Xu ,
A.H.W. Ngan ,
J.G. Huang  and
X.K. Meng
Ziwen Xu
Affiliation:
xuziwen@hkusua.hku.hk, The University of Hong Kong, Mechanical Engineering, Pokfulam Road, Hong Kong, N/A, N/A, Hong Kong
A.H.W. Ngan
Affiliation:
hwngan@hkucc.hku.hk, The University of Hong Kong, Department of Mechanical Engineering, Pokfulam Road, Hong Kong, N/A, N/A, China, People's Republic of
J.G. Huang
Affiliation:
hjgnju2004@163.com, Nanjing University, Department of Materials Science and Engineering, Nanjing, N/A, 210093, China, People's Republic of
X.K. Meng
Affiliation:
mengxk@nju.edu.cn, Nanjing University, Department of Materials Science and Engineering, Nanjing, N/A, 210093, China, People's Republic of
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Abstract

Thin films of Ge-Si with a duplex nanocrystalline structure were fabricated by magnetron co-sputtering and nanoindentations were made on these films. Transmission electron microscopy and Raman spectroscopy were used to analyze the deformed microstructures in the residual indentations. Amorphization and diamond-cubic (dc) to non-diamond-cubic (non-dc) phase transformation were observed and considered as the major micromechanisms in the deformation of the Ge-Si duplex nanocrystals.

Keywords

nanostructuretransmission electron microscopy (TEM)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 924: Symposium Z – Mechanics of Nanoscale Materials and Devices , 2006 , 0924-Z03-05
Copyright
Copyright © Materials Research Society 2006

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