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Deposition of Highly Transparent and Conductive Fluorine Doped Zinc Oxide Films

Published online by Cambridge University Press:  25 February 2011

Jianhua Hu  and
Roy G. Gordon
Jianhua Hu
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
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Abstract

Zinc oxide films have been deposited from dimethyl zinc and oxygen in an atmospheric pressure laminar flow reactor at temperatures ranging from 300°C to 450°C. Highly oriented, conductive and transparent films were obtained at temperatures above 400°C by doping the films with fluorine. The crystallite sizes increase with increasing deposition temperature. From electron microprobe analysis, the doped films usually contained 0.5% to 2% fluorine atoms. Hall coefficient and resistance measurements at room temperature gave electron concentrations above 1020cm−3 and resistivities around 10−3 Ωcm. The doped films had mobilities varying from 20 to 40 cm2/V-s depending on the deposition temperature and fluorine concentration. These are the highest mobilities reported for zinc oxide films. The experimental results were then compared with those obtained from a simple resistivity network model which includes the effects of impurity and grain boundary scattering. Films with a sheet resistance of 5 Ω/square have visible absorption of about 5 to 10%. These properties are very suitable for applications as transparent electrodes for flat-panel displays and other electro-optical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 457
Copyright
Copyright © Materials Research Society 1991

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References

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